onsemi TRANSISTORS - RF Transistors (BJT) - 55GN01F 55GN01F

Description
Manufacturer: ON Semiconductor Win Source Part Number: 075861-55GN01F Packaging: Reel - TR Mounting: SMD (SMT) Gain: 11dB to 19dB @ 1GHz to 400MHz Frequency - Transition: 4.5GHz to 5.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SSFP Maximum Current Collector: 70mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 100 @ 10mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 075861-55GN01F Packaging: Reel - TR Mounting: SMD (SMT) Gain: 11dB to 19dB @ 1GHz to 400MHz Frequency - Transition: 4.5GHz to 5.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SSFP Maximum Current Collector: 70mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 100 @ 10mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - RF Transistors (BJT) - 55GN01F - 075861-55GN01F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 55GN01F
075861-55GN01F
TRANSISTORS - RF Transistors (BJT) - 55GN01F 075861-55GN01F
Manufacturer: ON Semiconductor Win Source Part Number: 075861-55GN01F Packaging: Reel - TR Mounting: SMD (SMT) Gain: 11dB to 19dB @ 1GHz to 400MHz Frequency - Transition: 4.5GHz to 5.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SSFP Maximum Current Collector: 70mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 100 @ 10mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 075861-55GN01F
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 11dB to 19dB @ 1GHz to 400MHz
Frequency - Transition: 4.5GHz to 5.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-SSFP
Maximum Current Collector: 70mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 100 @ 10mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 075861-55GN01F
Product Name TRANSISTORS - RF Transistors (BJT) - 55GN01F
Polarity NPN; NPN
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