RF Transistor NPN 5.5GHz 10V 70mA 200mW SC-59 T/R Product overview: 55GN01CA-TB-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.5GHz, 10V, 70mA. Search-friendly keywords include transistor, BJT, switching, amplification, 5.5GHz, 10V, 70mA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-55GN01CA-TB-E can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 102060-55GN01CA-TB-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9.5dB
Frequency - Transition: 4.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-CP
Maximum Current Collector: 70mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 100 @ 10mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
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RF Bipolar Transistors SWITCHING DEVICE
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 283-55GN01CA-TB-E | 102060-55GN01CA-TB-E | 55GN01CA-TB-EOSDKR-ND | 55GN01CA-TB-E | 55GN01CA-TB-E | 55GN01CA-TB-E |
| Product Name | 5.5GHz 10V 70mA Bipolar Transistor | TRANSISTORS - RF Transistors (BJT) - 55GN01CA-TB-E | Bipolar RF Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar RF Transistors | RF Bipolar Transistors |
| Polarity | NPN | NPN; NPN | NPN | NPN; NPN | ||
| IC(max) | 70 milliamps | 70 milliamps | 70 milliamps | |||
| VCEO | 10 volts | 10 volts | 10 volts | 10 volts | ||
| VCBO | 20 volts | |||||
| fT | 4500 MHz |
