onsemi 50A02SP

The 50A02SP is a PNP epitaxial planar silicon transistor for low-frequency amplifier and switching applications in small motor drives and muting circuits. It comes in a 3-pin SOT-23 package with dimensions of 2.2 mm × 1.3 mm × 1.3 mm. The device has a maximum collector current of 500 mA and a collector dissipation of 400 mW. The collector-to-emitter saturation voltage is typ. 120 mV at IC = −100 mA and IB = −10 mA. The DC current gain (hFE) ranges from 200 to 500 at VCE = −2 V and IC = −10 mA. The gain-bandwidth product is 690 MHz. The junction temperature rating is 150°C, and the storage temperature range is −55°C to +150°C.