The 4N37TVM is a 6-pin general purpose phototransistor optocoupler in a PDIP6 package with 0.4" lead spacing and the DIN EN/IEC60747-5-5 option. It features a minimum current transfer ratio of 100% at IF = 10 mA and VCE = 10 V, an input-to-output isolation voltage of 4,170 VAC RMS for 1 minute, and a maximum working insulation voltage of 850 Vpeak. The device complies with UL1577 and DIN EN/IEC60747-5-5 safety standards, with an external clearance of at least 10 mm for the TV option, and operates within a temperature range of -40°C to +100°C.
Phototransistor Optocoupler, 5.25kV Isolation, 300mV VCEO, DIP Product overview: 4N37TVM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.25kV, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 5.25kV, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N37TVM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N37TVM |
| Product Name | 5.25kV DIP Bipolar Transistor |
| PD | 150 milliwatts |
