The 4N36SVM is a 6-pin dual in-line package phototransistor optocoupler consisting of a gallium arsenide infrared LED and a silicon phototransistor. It features a surface-mount leadform with VDE 0884 certification and is available in the white package configuration. The device supports an operating temperature range of -55°C to +100°C, with an isolation voltage of 7500 Vac (peak) for the white package and an isolation resistance of 10^11 Ω. Current transfer ratio is specified at a minimum of 30% at 10 mA input current and 10 V collector-emitter voltage. The collector-emitter breakdown voltage is 30 V, and peak forward current is 3 A. It meets UL and VDE safety standards. Packaging dimensions and reflow profiles are specified for white package variants.
6-Pin DIP Package Phototransistor Output Optocoupler, MDIP 6L, 1000-BULK Product overview: 4N36SVM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include transistor, BJT, switching, amplification, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N36SVM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N36SVM |
| Product Name | DIP Bipolar Transistor |
| PD | 150 milliwatts |
