The 4N35 is a general purpose 6-pin phototransistor optocoupler consisting of a gallium arsenide infrared emitting diode driven by a silicon phototransistor in a dual in-line package. It is available in black and white package variants, with the white package identified by the -M suffix. The device has a 30 V collector-emitter voltage rating, 100 mA forward input current, and 250 mW total device power dissipation at 25°C. Isolation voltage is 5300 Vac(rms) for black packages and 7500 Vac(pk) for white packages. It meets UL and VDE recognition standards and is suitable for applications including power supply regulators and digital logic interfaces.
Transistor Output Optocouplers Optocoupler Phototransistor Product overview: 4N35TM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N35TM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N35TM |
| Product Name | Bipolar Transistor |
| PD | 150 milliwatts |
