The 4N353SD is a 6-pin dual in-line package phototransistor optocoupler consisting of a gallium arsenide infrared emitting diode and a silicon phototransistor. It is available in a surface mount configuration with VDE 0884 certification and tape-and-reel packaging. The device supports an input forward current of up to 100 mA, a collector-emitter voltage of 30 V, and an isolation voltage of 5300 V rms for the black package variant. It meets UL and VDE safety standards and operates within a temperature range of -55°C to +100°C. The current transfer ratio ranges from 10% to 100% depending on the specific variant. The package dimensions conform to 0.4-inch lead spacing with a surface mount leadform.
Transistor Output Optocouplers Optocoupler SM-DIP6 Phototransistor Product overview: 4N353SD from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N353SD can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N353SD |
| Product Name | Bipolar Transistor |
| PD | 250 milliwatts |
