The 4N33300W is a 6-pin photodarlington optocoupler in a DIP package, featuring a gallium arsenide infrared emitter optically coupled to a silicon photodarlington detector. It has a collector-emitter breakdown voltage of 30 V, a continuous collector current of 150 mA, and an input-output isolation voltage of 5300 Vrms. The device is available with VDE 0884 approval and 0.4" lead spacing. It meets JEDEC registered specifications and operates over a temperature range of -55°C to +100°C. The package dimensions are 0.350 in x 0.270 in, with standard through-hole pin pitch.
Optocoupler 1-CH DC-IN 30V 150mA 5.3kV DIP Product overview: 4N33300W from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 150mA, 5.3kV, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 150mA, 5.3kV, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N33300W can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N33300W |
| Product Name | 30V 150mA 5.3kV DIP Bipolar Transistor |
| IC(max) | 150 milliamps |
