The 4N32S is a 6-pin surface mount photodarlington optocoupler with a gallium arsenide infrared emitter and a silicon planar photodarlington detector. It features VDE 0884 isolation certification and a 0.300 inch lead spacing. The device provides a minimum current transfer ratio of 10% at 10 mA input current and 10 V collector-emitter voltage. It supports an isolation voltage of 5300 Vac(rms), a collector-emitter breakdown voltage of 30 V, and operates from -55°C to 100°C. Total device power dissipation is 250 mW at 25°C, derating at 3.3 mW/°C above 25°C. The part is intended for low power logic circuits, telecommunications equipment, and interfacing systems of differing potentials.
OPTOISO 5.3KV DARL W/BASE 6SMD Product overview: 4N32S from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3KV. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N32S can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N32S |
| Product Name | 5.3KV Bipolar Transistor |
| Package Type | Tube |
