The 4N30M is a 6-pin DIP general-purpose photodarlington optocoupler with a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington detector. It has a maximum working insulation voltage of 850 V peak, with input-to-output isolation voltage of 4,170 VAC RMS for 1 minute and isolation resistance exceeding 10ⁱⁱ Ω at 500 VDC. The device meets DIN EN/IEC 60747-5-5 and UL1577 safety standards. The collector-emitter breakdown voltage is 30 V, with a maximum collector current of 150 mA. The current transfer ratio ranges from 10 mA to 100 mA at 10 mA input current and 10 V output voltage, and the saturation voltage is 1.0 V at 8 mA input current and 2 mA collector current. The operating temperature range is -40 to +100 °C, and it is qualified for surface-mount and through-hole mounting configurations.
GENERAL PURPOSE PHOTODARLINGTON Product overview: 4N30M from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N30M can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N30M |
| Product Name | Bipolar Transistor |
| Package Type | Bulk |
| Packing Method | Bulk |
| IC(max) | 150 milliamps |
