onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 4N30 4N30

Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 162462-4N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 43.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 5600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 69 mOhm @ 21.75A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited