The 4N28TM is a six-pin phototransistor optocoupler consisting of a gallium arsenide infrared emitting diode and a silicon phototransistor in a dual in-line package. It is available in a white package with a -M suffix and includes the VDE 0884 option as indicated by the 'V' designation. The device supports an isolation voltage of 7500 Vac (peak) for the white package, a collector-emitter voltage rating of 30 V, and a maximum input forward current of 60 mA. It is UL and VDE recognized, with an operating temperature range of -55°C to +100°C. The current transfer ratio (CTR) is specified as 10% minimum at 10 mA forward current and 10 V collector-emitter voltage. The device meets reflow soldering standards for surface mount applications with a peak temperature of 245°C and time above 183°C of 120-180 seconds.
Transistor Output Optocouplers Optocoupler Phototransistor Product overview: 4N28TM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N28TM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N28TM |
| Product Name | Bipolar Transistor |
| PD | 150 milliwatts |
