The 4N27SR2M is a surface-mount, 6-pin dual-in-line phototransistor optocoupler consisting of a gallium arsenide infrared LED and a silicon phototransistor, used for electrical isolation in digital logic and power supply applications. It shares the same package dimensions of 8.51 mm x 6.35 mm with 2.54 mm pin spacing as other devices in the 4N27M series. It has a maximum working insulation voltage of 850 V peak, an input-to-output isolation voltage of 4170 VAC RMS for one minute, and meets UL1577 and DIN EN/IEC60747-5-5 safety standards. The current transfer ratio is guaranteed minimum 10% at 10 mA input current and 10 V collector-emitter voltage. Maximum collector-to-emitter
Phototransistor Optocoupler, 5.3kV Isolation, 60mA Forward Current, SMD Product overview: 4N27SR2M from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 5.3kV, 60mA. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, 5.3kV, 60mA, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N27SR2M can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N27SR2M |
| Product Name | SMD 5.3kV 60mA Bipolar Transistor |
| PD | 150 milliwatts |
