The 4N26SR2VM is a 6-pin dual in-line phototransistor optocoupler consisting of a gallium arsenide infrared emitting diode and a silicon phototransistor, housed in a surface mount package with tape and reel formatting and VDE 0884 certification. It features an input-output isolation voltage of 7500 V peak for the white package variant, with an operating temperature range of -55°C to +100°C and a collector-emitter voltage rating of 30 V. The device meets UL and VDE safety standards, with a maximum power dissipation of 250 mW and a current transfer ratio ranging from 10% to 100% depending on configuration. The part complies with RoHS and is rated for wave soldering at 260°C for 10 seconds.
OPTOISO 4.17KV TRANS W/BASE 6SMD Product overview: 4N26SR2VM from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.17KV. Search-friendly keywords include transistor, BJT, switching, amplification, 4.17KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N26SR2VM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N26SR2VM |
| Product Name | 4.17KV Bipolar Transistor |
| Package Type | Reel - TR |
