The 4N25TVM is a 6-pin dual-in-line packaged general purpose phototransistor optocoupler comprising a gallium arsenide infrared LED and a silicon phototransistor. It features an input-to-output isolation voltage of 4170 VAC RMS for one minute and a maximum working insulation voltage of 850 V peak, compliant with UL1577 and DIN EN/IEC60747-5-5. The package has 0.4" lead spacing and meets the environmental criteria of climatic classification 55/100/21 with pollution degree 2. Operating temperature ranges from -40°C to +100°C, with a maximum junction temperature of 125°C. The device is designed for applications including power supply regulators and microprocessor inputs.
Phototransistor Optocoupler, 5.3kV Isolation, DIP, 60mA Product overview: 4N25TVM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3kV, 60mA, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3kV, 60mA, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N25TVM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N25TVM |
| Product Name | 5.3kV 60mA DIP Bipolar Transistor |
| PD | 150 milliwatts |
