RF Mosfet N-Channel Dual Gate 6V 10mA 200MHz 21dB 4-CP
FET RF 15V 200MHZ CP4
Manufacturer: ON Semiconductor
Win Source Part Number: 006143-3SK263-5-TG-E
Packaging: Reel - TR
Voltage Rating: 15V
Current Rating: 30mA
Frequency: 200MHz
Current - Test: 10mA
Gain: 21dB
Transistor Polarity: N-Channel Dual Gate
Voltage - Test: 6V
Noise Figure: 2.2dB
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: 4-CP
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
RF MOSFET 6V CP4
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | RF MOSFET Transistors | Transistors | RF Transistors |
| Product Number | 3SK263-5-TG-EOSTR-ND | 3SK263-5-TG-E | 006143-3SK263-5-TG-E | 3SK263-5-TG-E |
| Product Name | RF FETs, MOSFETs | RF FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3SK263-5-TG-E | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | TO-253-4, TO-253AA | TO-253-4, TO-253AA | SOT3; 4-CP | TO-253-4, TO-253AA |
| Polarity | N-Channel; N-Channel Dual Gate | N-Channel; N-Channel Dual Gate | ||
| Transistor Technology / Material | MOSFET | |||
| Power Gain | 21 dB |
