onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3SK263-5-TG-E 3SK263-5-TG-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 006143-3SK263-5-TG-E Packaging: Reel - TR Voltage Rating: 15V Current Rating: 30mA Frequency: 200MHz Current - Test: 10mA Gain: 21dB Transistor Polarity: N-Channel Dual Gate Voltage - Test: 6V Noise Figure: 2.2dB Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 4-CP Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 006143-3SK263-5-TG-E Packaging: Reel - TR Voltage Rating: 15V Current Rating: 30mA Frequency: 200MHz Current - Test: 10mA Gain: 21dB Transistor Polarity: N-Channel Dual Gate Voltage - Test: 6V Noise Figure: 2.2dB Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 4-CP Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3SK263-5-TG-E - 006143-3SK263-5-TG-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3SK263-5-TG-E
006143-3SK263-5-TG-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3SK263-5-TG-E 006143-3SK263-5-TG-E
Manufacturer: ON Semiconductor Win Source Part Number: 006143-3SK263-5-TG-E Packaging: Reel - TR Voltage Rating: 15V Current Rating: 30mA Frequency: 200MHz Current - Test: 10mA Gain: 21dB Transistor Polarity: N-Channel Dual Gate Voltage - Test: 6V Noise Figure: 2.2dB Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 4-CP Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 006143-3SK263-5-TG-E
Packaging: Reel - TR
Voltage Rating: 15V
Current Rating: 30mA
Frequency: 200MHz
Current - Test: 10mA
Gain: 21dB
Transistor Polarity: N-Channel Dual Gate
Voltage - Test: 6V
Noise Figure: 2.2dB
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: 4-CP
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
RF FETs, MOSFETs - 3SK263-5-TG-EOSTR-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
3SK263-5-TG-EOSTR-ND
RF FETs, MOSFETs 3SK263-5-TG-EOSTR-ND
RF Mosfet N-Channel Dual Gate 6V 10mA 200MHz 21dB 4-CP

RF Mosfet N-Channel Dual Gate 6V 10mA 200MHz 21dB 4-CP

Buy Now Datasheet
RF FETs, MOSFETs - 3SK263-5-TG-E - ODG (Origin Data Global)
Shenzhen, China
RF FETs, MOSFETs
3SK263-5-TG-E
RF FETs, MOSFETs 3SK263-5-TG-E
FET RF 15V 200MHZ CP4

FET RF 15V 200MHZ CP4

Supplier's Site Datasheet
Singapore
Dual 15V 30mA MOSFET Transistor
285-3SK263-5-TG-E
Dual 15V 30mA MOSFET Transistor 285-3SK263-5-TG-E
N-Channnel Dual Gate MOSFET, 15V, 30mA, PG=21dB, NF=1.1dB, CP4, CP4, 3000-REEL Product overview: 3SK263-5-TG-E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 15V, 30mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 15V, 30mA, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-3SK263-5-TG-E can be used for catalog matching and distributor lookup.

N-Channnel Dual Gate MOSFET, 15V, 30mA, PG=21dB, NF=1.1dB, CP4, CP4, 3000-REEL Product overview: 3SK263-5-TG-E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 15V, 30mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 15V, 30mA, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-3SK263-5-TG-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 3SK263-5-TG-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
3SK263-5-TG-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 3SK263-5-TG-E
RF MOSFET 6V CP4

RF MOSFET 6V CP4

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 006143-3SK263-5-TG-E 3SK263-5-TG-EOSTR-ND 3SK263-5-TG-E 285-3SK263-5-TG-E 3SK263-5-TG-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3SK263-5-TG-E RF FETs, MOSFETs RF FETs, MOSFETs Dual 15V 30mA MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel Dual Gate N-Channel; N-Channel Dual Gate
Package Type SOT3; 4-CP TO-253-4, TO-253AA TO-253-4, TO-253AA TO-253-4, TO-253AA
Transistor Technology / Material MOSFET
Power Gain 21 dB
Noise Figure 2.2 dB
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