onsemi Single FETs, MOSFETs 3LP01C-TB-E

Description
P-Channel 30V 100mA (Ta) 250mW (Ta) Surface Mount SC-59-3/CP3
Request a Quote Datasheet
Description
P-Channel 30V 100mA (Ta) 250mW (Ta) Surface Mount SC-59-3/CP3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 3LP01C-TB-E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3LP01C-TB-E-ND
Single FETs, MOSFETs 3LP01C-TB-E-ND
P-Channel 30V 100mA (Ta) 250mW (Ta) Surface Mount SC-59-3/CP3

P-Channel 30V 100mA (Ta) 250mW (Ta) Surface Mount SC-59-3/CP3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3LP01C-TB-E - 006135-3LP01C-TB-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3LP01C-TB-E
006135-3LP01C-TB-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3LP01C-TB-E 006135-3LP01C-TB-E
Manufacturer: ON Semiconductor Win Source Part Number: 006135-3LP01C-TB-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 250mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Temperature Range - Operating: 150°C (TJ) Case / Package: 3-CP Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100mA (Ta) Max Gate Charge: 1.43nC @ 10V Max Input Capacitance: 7.5pF @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 10.4 Ohm @ 50mA, 4V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 006135-3LP01C-TB-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 250mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-CP
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 100mA (Ta)
Max Gate Charge: 1.43nC @ 10V
Max Input Capacitance: 7.5pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 10.4 Ohm @ 50mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
 - 3LP01C-TB-E - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 0.1A, 30V, P-Channel MOSFET, TO-236AB

Small Signal Field-Effect Transistor, 0.1A, 30V, P-Channel MOSFET, TO-236AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 3LP01C-TB-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
3LP01C-TB-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 3LP01C-TB-E
MOSFET P-CH 30V 100MA 3CP

MOSFET P-CH 30V 100MA 3CP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF MOSFET Transistors RF Transistors
Product Number 3LP01C-TB-E-ND 006135-3LP01C-TB-E 3LP01C-TB-E 3LP01C-TB-E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3LP01C-TB-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; 3-CP TO-236AB 7.5 pF @ 10 V
V(BR)DSS 30 volts
Unlock Full Specs
to access all available technical data