onsemi 3LN03SS-TL-E

N-Channel Silicon MOSFET for general-purpose switching applications in an SSFP package, with a 30 V drain-to-source voltage rating, 0.35 A continuous drain current, and 2.5 V gate drive capability. The device features built-in gate-to-source protection diode, low ON-resistance (typical 0.9 Ω at 4 V gate drive), and high-speed switching performance with turn-on delay of 8 ns and fall time of 6 ns. Total gate charge is 1 nC at 4 V gate bias. Operating junction temperature range is -55 °C to +150 °C.