onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3LN01C-TB-E 3LN01C-TB-E

Manufacturer: ON Semiconductor
Win Source Part Number: 006131-3LN01C-TB-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-CP
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 150mA (Ta)
Max Gate Charge: 1.58nC @ 10V
Max Input Capacitance: 7pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 3.7 Ohm @ 80mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient

N-Channel 30V 150mA (Ta) 250mW (Ta) Surface Mount SC-59-3/CP3

Small Signal MOSFET 30V 150mA 3.7 Ohm Single N-Channel CP, SC-59 / CP, 3000-REEL Product overview: 3LN01C-TB-E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 150mA, 3.7 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 150mA, 3.7 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-3LN01C-TB-E can be used for catalog matching and distributor lookup.