onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 38AN08A1 38AN08A1

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 197682-38AN08A1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 450W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 22A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 8665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 197682-38AN08A1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 450W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 22A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 8665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 38AN08A1 - 197682-38AN08A1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 38AN08A1
197682-38AN08A1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 38AN08A1 197682-38AN08A1
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 197682-38AN08A1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 450W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 22A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 8665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 197682-38AN08A1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 450W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 22A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 8665pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 197682-38AN08A1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 38AN08A1
Polarity N-Channel; N-Channel
V(BR)DSS 75 volts
PD 450000 milliwatts
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