N-Channel JFET, 60V, 115mA, 7.5R, SOT-23 Product overview: 2V7002LT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 115mA, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 115mA, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2V7002LT1G can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 115MA SOT23-3
N-Channel 60V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET N-CH 60V 115MA SOT23-3
N-Channel 60V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
Manufacturer: ON Semiconductor
Win Source Part Number: 1004803-2V7002LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 225mW (Ta)
Family Name: 2V7002L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 115mA (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Input Capacitance: 50pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): 2N7002; 2N7002-TP; 2N7002-TP-HF;
ECCN: EAR99
Country of Origin: China, Czech Republic
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient
MOSFET, N-CH, 60V, 0.115A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:115mA; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:225mW; No. of Pins:3Pins RoHS Compliant: Yes
MOSFET, N-CH, 60V, 0.115A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes
60V 115mA 7.5Ω@10V,500mA 225mW 2.5V@250uA N Channel SOT-23 MOSFETs ROHS
MOSFET N-CH 60V 115MA SOT23-3
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-2V7002LT1G | 2V7002LT1G | 2V7002LT1GOSCT-ND | 1004803-2V7002LT1G | 2V7002LT1G | 81Y7620 | 85AC2358 | 2V7002LT1G | 2V7002LT1G |
| Product Name | N-Channel 60V 115mA SOT-23 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2V7002LT1G | MOSFET | Mosfet, N-Ch, 60V, 0.115A, Sot-23; Channel Type Onsemi | Mosfet, N-Ch, 60V, 0.115A, Sot-23; Transistor Polarity Onsemi | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 225 milliwatts | 225 milliwatts | 225 milliwatts | 225 milliwatts | 225 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts |
