Manufacturer: ON Semiconductor
Win Source Part Number: 006002-2SK536-TB-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: SC-59
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 100mA (Ta)
Max Input Capacitance: 15pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 20 Ohm @ 10mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 50V 100MA SC59
Small Signal Field-Effect Transistor
MOSFET N-CH 50V 100MA SC59
| Win Source Electronics | ODG (Origin Data Global) | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | RF Transistors |
| Product Number | 006002-2SK536-TB-E | 2SK536-TB-E | 2SK536-TB-E | 2SK536-TB-E |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK536-TB-E | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 50 volts | 50 volts | ||
| PD | 200 milliwatts | 200 milliwatts | ||
| TJ | 125 C (257 F) | 125 C (257 F) |
