onsemi N-Channel 50V 100mA MOSFET Transistor 2SK536-TB-E

Description
Small Signal Field-Effect Transistor
Request a Quote Datasheet
Description
Small Signal Field-Effect Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 2SK536-TB-E - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor

Small Signal Field-Effect Transistor

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 50V 100mA MOSFET Transistor
278-2SK536-TB-E
N-Channel 50V 100mA MOSFET Transistor 278-2SK536-TB-E
N-Channel MOSFET 50V, 100mA, Single CP, SC-59 3 LEAD, 3000-REEL Product overview: 2SK536-TB-E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 50V, 100mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 100mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK536-TB-E can be used for catalog matching and distributor lookup.

N-Channel MOSFET 50V, 100mA, Single CP, SC-59 3 LEAD, 3000-REEL Product overview: 2SK536-TB-E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 50V, 100mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 100mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK536-TB-E can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK536-TB-E - 006002-2SK536-TB-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK536-TB-E
006002-2SK536-TB-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK536-TB-E 006002-2SK536-TB-E
Manufacturer: ON Semiconductor Win Source Part Number: 006002-2SK536-TB-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 125°C (TJ) Case / Package: SC-59 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 100mA (Ta) Max Input Capacitance: 15pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 20 Ohm @ 10mA, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 006002-2SK536-TB-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: SC-59
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 100mA (Ta)
Max Input Capacitance: 15pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 20 Ohm @ 10mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK536-TB-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK536-TB-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK536-TB-E
MOSFET N-CH 50V 100MA SC59

MOSFET N-CH 50V 100MA SC59

Supplier's Site
Single FETs, MOSFETs - 2SK536-TB-E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
2SK536-TB-E
Single FETs, MOSFETs 2SK536-TB-E
MOSFET N-CH 50V 100MA SC59

MOSFET N-CH 50V 100MA SC59

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK536-TB-E 278-2SK536-TB-E 006002-2SK536-TB-E 2SK536-TB-E 2SK536-TB-E
Product Name N-Channel 50V 100mA MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK536-TB-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Package Type SC-59-3 SOT3; SOT23; SC-59 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR)
PD 200 milliwatts 200 milliwatts 200 milliwatts
Polarity N-Channel; N-Channel N-Channel; N-Channel
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