onsemi Single FETs, MOSFETs 2SK536-TB-E

Description
Small Signal Field-Effect Transistor
Request a Quote Datasheet
Description
Small Signal Field-Effect Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 2SK536-TB-E - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor

Small Signal Field-Effect Transistor

Supplier's Site Datasheet
Single FETs, MOSFETs - 2SK536-TB-E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
2SK536-TB-E
Single FETs, MOSFETs 2SK536-TB-E
MOSFET N-CH 50V 100MA SC59

MOSFET N-CH 50V 100MA SC59

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK536-TB-E - 006002-2SK536-TB-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK536-TB-E
006002-2SK536-TB-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK536-TB-E 006002-2SK536-TB-E
Manufacturer: ON Semiconductor Win Source Part Number: 006002-2SK536-TB-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 125°C (TJ) Case / Package: SC-59 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 100mA (Ta) Max Input Capacitance: 15pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 20 Ohm @ 10mA, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 006002-2SK536-TB-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: SC-59
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 100mA (Ta)
Max Input Capacitance: 15pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 20 Ohm @ 10mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK536-TB-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK536-TB-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK536-TB-E
MOSFET N-CH 50V 100MA SC59

MOSFET N-CH 50V 100MA SC59

Supplier's Site

Technical Specifications

  Rochester Electronics ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2SK536-TB-E 2SK536-TB-E 006002-2SK536-TB-E 2SK536-TB-E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK536-TB-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SC-59-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SC-59 SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR)
Polarity N-Channel; N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
Unlock Full Specs
to access all available technical data