onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4124-1E 2SK4124-1E

Manufacturer: ON Semiconductor
Win Source Part Number: 127474-2SK4124-1E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P-3L
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 20A (Ta)
Max Gate Charge: 46.6nC @ 10V
Max Input Capacitance: 1200pF @ 30V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 430 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

N-Channel Power MOSFET, 500V, 20A, 430mΩ, TO-3P-3L, TO-3P-3L, 30-TUBE Product overview: 2SK4124-1E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK4124-1E can be used for catalog matching and distributor lookup.