onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3817-DL-E 2SK3817-DL-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1004749-2SK3817-DL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.65W (Ta), 65W (Tc) Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SMP-FD Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 60A (Ta) Gate-Source Threshold Voltage: 2.6V @ 1mA Max Gate Charge: 67nC @ 10V Max Input Capacitance: 3500pF @ 20V Maximum Rds On at Id,Vgs: 15 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1004749-2SK3817-DL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.65W (Ta), 65W (Tc) Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SMP-FD Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 60A (Ta) Gate-Source Threshold Voltage: 2.6V @ 1mA Max Gate Charge: 67nC @ 10V Max Input Capacitance: 3500pF @ 20V Maximum Rds On at Id,Vgs: 15 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3817-DL-E - 1004749-2SK3817-DL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3817-DL-E
1004749-2SK3817-DL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3817-DL-E 1004749-2SK3817-DL-E
Manufacturer: ON Semiconductor Win Source Part Number: 1004749-2SK3817-DL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.65W (Ta), 65W (Tc) Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SMP-FD Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 60A (Ta) Gate-Source Threshold Voltage: 2.6V @ 1mA Max Gate Charge: 67nC @ 10V Max Input Capacitance: 3500pF @ 20V Maximum Rds On at Id,Vgs: 15 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1004749-2SK3817-DL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SMP-FD
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 60A (Ta)
Gate-Source Threshold Voltage: 2.6V @ 1mA
Max Gate Charge: 67nC @ 10V
Max Input Capacitance: 3500pF @ 20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK3817-DL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK3817-DL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK3817-DL-E
MOSFET N-CH 60V 60A SMP-FD

MOSFET N-CH 60V 60A SMP-FD

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1004749-2SK3817-DL-E 2SK3817-DL-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3817-DL-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 1650 to 65000 milliwatts
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