onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3707 2SK3707

Description
Manufacturer: ON Semiconductor Win Source Part Number: 139375-2SK3707 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220ML Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 20A (Ta) Max Gate Charge: 44nC @ 10V Max Input Capacitance: 2150pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 139375-2SK3707 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220ML Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 20A (Ta) Max Gate Charge: 44nC @ 10V Max Input Capacitance: 2150pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3707 - 139375-2SK3707 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3707
139375-2SK3707
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3707 139375-2SK3707
Manufacturer: ON Semiconductor Win Source Part Number: 139375-2SK3707 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220ML Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 20A (Ta) Max Gate Charge: 44nC @ 10V Max Input Capacitance: 2150pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 139375-2SK3707
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220ML
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 20A (Ta)
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 2150pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK3707 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK3707
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK3707
MOSFET N-CH 100V 20A TO220ML

MOSFET N-CH 100V 20A TO220ML

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 139375-2SK3707 2SK3707
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3707 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 2000 to 25000 milliwatts
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