onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3703-1E 2SK3703-1E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1004741-2SK3703-1E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220F-3SG Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 30A (Ta) Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1780pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3703-1E - 1004741-2SK3703-1E - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK3703-1E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 60V, 30A, To-220F-3Sg; Channel Type Onsemi - 60W2033 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET NCH 4V DRIVE SERIES - 598-2SK3703-1E - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1004741-2SK3703-1E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220F-3SG Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 30A (Ta) Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1780pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3703-1E - 1004741-2SK3703-1E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3703-1E
1004741-2SK3703-1E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3703-1E 1004741-2SK3703-1E
Manufacturer: ON Semiconductor Win Source Part Number: 1004741-2SK3703-1E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220F-3SG Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 30A (Ta) Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1780pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1004741-2SK3703-1E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220F-3SG
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 30A (Ta)
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1780pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
2SK3703-1E
MOSFET 2SK3703-1E
MOSFET NCH 4V DRIVE SERIES

MOSFET NCH 4V DRIVE SERIES

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK3703-1E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK3703-1E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK3703-1E
MOSFET N-CH 60V 30A TO220F-3SG

MOSFET N-CH 60V 30A TO220F-3SG

Supplier's Site
Mosfet, N-Ch, 60V, 30A, To-220F-3Sg; Channel Type Onsemi - 60W2033 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 30A, To-220F-3Sg; Channel Type Onsemi
60W2033
Mosfet, N-Ch, 60V, 30A, To-220F-3Sg; Channel Type Onsemi 60W2033
MOSFET, N-CH, 60V, 30A, TO-220F-3SG; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

MOSFET, N-CH, 60V, 30A, TO-220F-3SG; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET NCH 4V DRIVE SERIES - 598-2SK3703-1E - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET NCH 4V DRIVE SERIES
598-2SK3703-1E
MOSFET NCH 4V DRIVE SERIES 598-2SK3703-1E
MOSFET NCH 4V DRIVE SERIES

MOSFET NCH 4V DRIVE SERIES

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1004741-2SK3703-1E 2SK3703-1E 2SK3703-1E 60W2033 598-2SK3703-1E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3703-1E MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 30A, To-220F-3Sg; Channel Type Onsemi MOSFET NCH 4V DRIVE SERIES
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts 60 volts
PD 2000 to 25000 milliwatts 25000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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