onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3703-1E 2SK3703-1E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1004741-2SK3703-1E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220F-3SG Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 30A (Ta) Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1780pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3703-1E - 1004741-2SK3703-1E - Win Source Electronics
    Win Source Electronics
  • Mosfet, N-Ch, 60V, 30A, To-220F-3Sg; Channel Type Onsemi - 60W2033 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET NCH 4V DRIVE SERIES - 598-2SK3703-1E - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK3703-1E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1004741-2SK3703-1E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220F-3SG Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 30A (Ta) Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1780pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3703-1E - 1004741-2SK3703-1E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3703-1E
1004741-2SK3703-1E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3703-1E 1004741-2SK3703-1E
Manufacturer: ON Semiconductor Win Source Part Number: 1004741-2SK3703-1E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220F-3SG Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 30A (Ta) Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1780pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1004741-2SK3703-1E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220F-3SG
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 30A (Ta)
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1780pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Mosfet, N-Ch, 60V, 30A, To-220F-3Sg; Channel Type Onsemi - 60W2033 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 30A, To-220F-3Sg; Channel Type Onsemi
60W2033
Mosfet, N-Ch, 60V, 30A, To-220F-3Sg; Channel Type Onsemi 60W2033
MOSFET, N-CH, 60V, 30A, TO-220F-3SG; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

MOSFET, N-CH, 60V, 30A, TO-220F-3SG; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
2SK3703-1E
MOSFET 2SK3703-1E
MOSFET NCH 4V DRIVE SERIES

MOSFET NCH 4V DRIVE SERIES

Buy Now Datasheet
MOSFET NCH 4V DRIVE SERIES - 598-2SK3703-1E - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET NCH 4V DRIVE SERIES
598-2SK3703-1E
MOSFET NCH 4V DRIVE SERIES 598-2SK3703-1E
MOSFET NCH 4V DRIVE SERIES

MOSFET NCH 4V DRIVE SERIES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK3703-1E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK3703-1E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK3703-1E
MOSFET N-CH 60V 30A TO220F-3SG

MOSFET N-CH 60V 30A TO220F-3SG

Supplier's Site

Technical Specifications

  Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1004741-2SK3703-1E 60W2033 2SK3703-1E 598-2SK3703-1E 2SK3703-1E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3703-1E Mosfet, N-Ch, 60V, 30A, To-220F-3Sg; Channel Type Onsemi MOSFET MOSFET NCH 4V DRIVE SERIES Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts 60 volts
PD 2000 to 25000 milliwatts 25000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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