onsemi JFETs (Junction Field Effect) - 2SK3666-3-TB-E 2SK3666-3-TB-E

Manufacturer: ON Semiconductor
Win Source Part Number: 1004739-2SK3666-3-TB-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Polarity: N-Channel
Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
Current Drain (Id) - Max: 10mA
Voltage - Cutoff (VGS off) @ Id: 180mV @ 1μA
Resistance - RDS(On): 200 Ohm
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-CP
Maximum Power Dissipation: 200mW
Drain-Source Breakdown Voltage: 30V
Max Input Capacitance: 4pF @ 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Small Signal Field-Effect Transistor

Trans JFET N-CH 30V 10mA Si 3-Pin SC-59 T/R Product overview: 2SK3666-3-TB-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10mA. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 10mA, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2SK3666-3-TB-E can be used for catalog matching and distributor lookup.

JFET N-Channel 10mA 200mW Surface Mount SMCP