Trans JFET N-CH 30V 10mA Si 3-Pin SC-59 T/R Product overview: 2SK3666-2-TB-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10mA. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 10mA, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2SK3666-2-TB-E can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1004740-2SK3666-2-TB
Packaging: Reel - TR
Mounting: SMD (SMT)
Polarity: N-Channel
Current - Drain (Idss) @ Vds (Vgs=0): 600μA @ 10V
Current Drain (Id) - Max: 10mA
Voltage - Cutoff (VGS off) @ Id: 180mV @ 1μA
Resistance - RDS(On): 200 Ohm
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-CP
Maximum Power Dissipation: 200mW
Drain-Source Breakdown Voltage: 30V
Max Input Capacitance: 4pF @ 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
JFET NCH 30V 200MW 3CP
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Transistors | Transistors | RF Transistors |
| Product Number | 2SK3666-2-TB-E | 288-2SK3666-2-TB-E | 1004740-2SK3666-2-TB-E | 488-2SK3666-2-TB-ETR-ND | 2SK3666-2-TB-E | 2SK3666-2-TB-E |
| Product Name | JFETs | 30V 10mA Bipolar Transistor | JFETs (Junction Field Effect) - 2SK3666-2-TB-E | JFETs | JFET | Discrete Semiconductor Products - Transistors - JFETs |
| Transistor Type | JFET | JFET | JFET | |||
| PD | 200 milliwatts | |||||
| TJ | -55 C (-67 F) |