onsemi 2SK3618-E

N-Channel Silicon MOSFET in a TP-FA package, designed for general-purpose switching applications. It features low ON-resistance, ultrahigh-speed switching, and 4V drive capability. Maximum drain-to-source voltage is 100 V, drain current is 8 A (DC) or 32 A (pulse), and allowable power dissipation is 20 W at Tc=25°C. Channel temperature rating is 150°C. Electrical characteristics include RDS(on) of 100 to 180 mΩ at ID=4A and VGS=4-10V, input capacitance of 880 pF, and total gate charge of 24 nC. Operating and storage temperature range is -55°C to +150°C. Meets no specified industry standards beyond general semiconductor reliability guidelines.