onsemi FETs - Single - 2SJ652 2SJ652

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1126897-2SJ652 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220ML Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.ssdc-jp.com/eng/ Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 2W, 30W Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 100 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 28A Rds On (Maximum) at Id, Vgs: 38mOhm at 14A, 10V Gate Charge (Qg) (Maximum) at Vgs: 80nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4360pF at 20V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1126897-2SJ652 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220ML Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.ssdc-jp.com/eng/ Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 2W, 30W Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 100 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 28A Rds On (Maximum) at Id, Vgs: 38mOhm at 14A, 10V Gate Charge (Qg) (Maximum) at Vgs: 80nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4360pF at 20V
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FETs - Single - 2SJ652 - 1126897-2SJ652 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - 2SJ652
1126897-2SJ652
FETs - Single - 2SJ652 1126897-2SJ652
Manufacturer: ON Semiconductor Win Source Part Number: 1126897-2SJ652 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220ML Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.ssdc-jp.com/eng/ Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 2W, 30W Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 100 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 28A Rds On (Maximum) at Id, Vgs: 38mOhm at 14A, 10V Gate Charge (Qg) (Maximum) at Vgs: 80nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4360pF at 20V

Manufacturer: ON Semiconductor
Win Source Part Number: 1126897-2SJ652
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220ML
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.ssdc-jp.com/eng/
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 2W, 30W
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 100
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 28A
Rds On (Maximum) at Id, Vgs: 38mOhm at 14A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 80nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 4360pF at 20V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SJ652 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SJ652
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SJ652
MOSFET P-CH 60V 28A TO220ML

MOSFET P-CH 60V 28A TO220ML

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1126897-2SJ652 2SJ652
Product Name FETs - Single - 2SJ652 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 60 volts
PD 2000 to 30000 milliwatts
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