onsemi Single FETs, MOSFETs 2SJ652-1E

MOSFET P-CH 60V 28A TO220F-3SG

Manufacturer: ON Semiconductor
Win Source Part Number: 108024-2SJ652-1E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220F-3SG
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 28A (Ta)
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 4360pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 38 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

P-Channel Power MOSFET, -60V, -28A, 38mΩ, 50-TUBE Product overview: 2SJ652-1E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SJ652-1E can be used for catalog matching and distributor lookup.