onsemi Single FETs, MOSFETs 2SJ652-1E

Description
MOSFET P-CH 60V 28A TO220F-3SG
Request a Quote Datasheet
Description
MOSFET P-CH 60V 28A TO220F-3SG
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 2SJ652-1E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
2SJ652-1E
Single FETs, MOSFETs 2SJ652-1E
MOSFET P-CH 60V 28A TO220F-3SG

MOSFET P-CH 60V 28A TO220F-3SG

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ652-1E - 108024-2SJ652-1E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ652-1E
108024-2SJ652-1E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ652-1E 108024-2SJ652-1E
Manufacturer: ON Semiconductor Win Source Part Number: 108024-2SJ652-1E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220F-3SG Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 28A (Ta) Max Gate Charge: 80nC @ 10V Max Input Capacitance: 4360pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 38 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 108024-2SJ652-1E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220F-3SG
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 28A (Ta)
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 4360pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 38 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SJ652-1E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SJ652-1E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SJ652-1E
MOSFET P-CH 60V 28A TO220F-3SG

MOSFET P-CH 60V 28A TO220F-3SG

Supplier's Site
Sheung Wan, Hong Kong
MOSFET PCH 4V DRIVE SERIES

MOSFET PCH 4V DRIVE SERIES

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SJ652-1E 108024-2SJ652-1E 2SJ652-1E 2SJ652-1E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ652-1E Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 28000 milliamps
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