onsemi 2SD863E

NPN silicon transistor for voltage regulator and relay lamp driver applications, housed in a 3-pin TO-92-style package measuring 6.0 mm in length, 5.0 mm in width, and 0.5 mm in thickness. It has a collector-to-emitter voltage rating of 50 V, a collector current rating of 1 A (2 A pulsed), and a collector dissipation of 0.9 W. The DC current gain (hFE) ranges from 100 to 200 for the E-bin variant, measured at VCE = -2 V and IC = -50 mA. The gain-bandwidth product is 150 MHz, with an output capacitance of 12 pF at VCB = -10 V and f = 1 MHz. The junction temperature rating is 150 °C, and storage temperature ranges from -55 °C to +150 °C.