onsemi 2SD826F

NPN silicon transistor for flash circuits, rated for 20V collector-to-emitter voltage and 5A continuous collector current, with a peak pulsed current of 8A. It features a low collector-to-emitter saturation voltage of 0.5V at 3A and a minimum DC current gain (hFE) of 160. The device is packaged in a TO-126 case with dimensions of 8.0mm x 5.1mm x 2.7mm. It operates from -55°C to +150°C for storage and up to 150°C junction temperature. The part meets the standard application guidelines for general electronics equipment and is not intended for life-sustaining or high-reliability systems.