NPN Epitaxial Planar Silicon Transistor (DC/DC Converter Applications)
Win Source Part Number: 1037473-2SD734F-AA
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 1
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 700 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V
Frequency - Transition: 250MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: 3-NP
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: onsemi
Other Names: 2156-2SD734F-AA
Product Status: Obsolete
RoHS Status: RoHS non-compliant
NPN EPITAXIAL PLANAR SILICON TRA
| Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 2SD734F-AA | 1037473-2SD734F-AA | 2SD734F-AA |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | NPN | NPN | |
| Package Type | SOT3 | ||
| IC(max) | 700 milliamps | 700 milliamps | |
| Power Gain | 160 dB | ||
| Operating Frequency | 250 MHz |
