onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 2SD734F-AA

Description
Win Source Part Number: 1037473-2SD734F-AA Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1 Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 700 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V Frequency - Transition: 250MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: 3-NP Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 70 pct. REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: onsemi Other Names: 2156-2SD734F-AA Product Status: Obsolete RoHS Status: RoHS non-compliant
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Description
Win Source Part Number: 1037473-2SD734F-AA Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1 Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 700 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V Frequency - Transition: 250MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: 3-NP Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 70 pct. REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: onsemi Other Names: 2156-2SD734F-AA Product Status: Obsolete RoHS Status: RoHS non-compliant
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Suppliers

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Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1037473-2SD734F-AA - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1037473-2SD734F-AA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1037473-2SD734F-AA
Win Source Part Number: 1037473-2SD734F-AA Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1 Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 700 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V Frequency - Transition: 250MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: 3-NP Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 70 pct. REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: onsemi Other Names: 2156-2SD734F-AA Product Status: Obsolete RoHS Status: RoHS non-compliant

Win Source Part Number: 1037473-2SD734F-AA
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 1
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 700 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V
Frequency - Transition: 250MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: 3-NP
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: onsemi
Other Names: 2156-2SD734F-AA
Product Status: Obsolete
RoHS Status: RoHS non-compliant

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Technical Specifications

  Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors RF Transistors Bipolar RF Transistors
Product Number 1037473-2SD734F-AA 2SD734F-AA 2SD734F-AA
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type SOT3
IC(max) 700 milliamps 700 milliamps
Power Gain 160 dB
Operating Frequency 250 MHz
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