onsemi 100V 4A DPAK Bipolar Transistor 2SD1816T-TL-E

Description
Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single, DPAK / TP-FA, 700-REEL Product overview: 2SD1816T-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 4A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD1816T-TL-E can be used for catalog matching and distributor lookup.
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Description
Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single, DPAK / TP-FA, 700-REEL Product overview: 2SD1816T-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 4A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD1816T-TL-E can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
100V 4A DPAK Bipolar Transistor
276-2SD1816T-TL-E
100V 4A DPAK Bipolar Transistor 276-2SD1816T-TL-E
Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single, DPAK / TP-FA, 700-REEL Product overview: 2SD1816T-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 4A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD1816T-TL-E can be used for catalog matching and distributor lookup.

Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single, DPAK / TP-FA, 700-REEL Product overview: 2SD1816T-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 4A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD1816T-TL-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 2SD1816T-TL-EOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SD1816T-TL-EOSTR-ND
Single Bipolar Transistors 2SD1816T-TL-EOSTR-ND
Bipolar (BJT) Transistor NPN 100V 4A 180MHz 1W Surface Mount TP-FA

Bipolar (BJT) Transistor NPN 100V 4A 180MHz 1W Surface Mount TP-FA

Buy Now Datasheet
Single Bipolar Transistors - 2SD1816T-TL-EOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SD1816T-TL-EOSCT-ND
Single Bipolar Transistors 2SD1816T-TL-EOSCT-ND
Bipolar (BJT) Transistor NPN 100V 4A 180MHz 1W Surface Mount TP-FA

Bipolar (BJT) Transistor NPN 100V 4A 180MHz 1W Surface Mount TP-FA

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 - 2SD1816T-TL-E - Rochester Electronics
Newburyport, MA, United States
Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single

Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SD1816T-TL-E - 762827-2SD1816T-TL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD1816T-TL-E
762827-2SD1816T-TL-E
TRANSISTORS - Transistors (BJT) - Single - 2SD1816T-TL-E 762827-2SD1816T-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 762827-2SD1816T-TL-E Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: SMD Power - Max: 1W Transistor Type: NPN Frequency - Transition: 180MHz Family Name: 2SD1816T Categories: Discrete Semiconductor Products Manufacturer Package: 2-TP-FA Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 100V Vce Saturation (Maximum) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Maximum): 1μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 500mA, 5V Alternative Parts (Cross-Reference): MJD31C; MJD31CT4; MJD31CT4-A; ; Introduction Date: November 28, 2003 ECCN: EAR99 Estimated EOL Date: 2025 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 762827-2SD1816T-TL-E
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Power - Max: 1W
Transistor Type: NPN
Frequency - Transition: 180MHz
Family Name: 2SD1816T
Categories: Discrete Semiconductor Products
Manufacturer Package: 2-TP-FA
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Vce Saturation (Maximum) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Maximum): 1μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 500mA, 5V
Alternative Parts (Cross-Reference): MJD31C; MJD31CT4; MJD31CT4-A; ;
Introduction Date: November 28, 2003
ECCN: EAR99
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SD1816T-TL-E - 1126342-2SD1816T-TL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD1816T-TL-E
1126342-2SD1816T-TL-E
TRANSISTORS - Transistors (BJT) - Single - 2SD1816T-TL-E 1126342-2SD1816T-TL-E
Manufacturer: SANYO Semiconductor (U.S.A) Corporation Win Source Part Number: 1126342-2SD1816T-TL- E Manufacturer Homepage: www.ssdc-jp.com/eng/ Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Win Source Part Number: 1126342-2SD1816T-TL-E
Manufacturer Homepage: www.ssdc-jp.com/eng/
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SD1816T-TL-E
Bipolar Transistors - BJT 2SD1816T-TL-E
Bipolar Transistors - BJT HF LOW-NOISE AMPLIFIER

Bipolar Transistors - BJT HF LOW-NOISE AMPLIFIER

Buy Now Datasheet
Transistor, Npn, 100V, 4A, To-252; Transistor Polarity Onsemi - 99AC6871 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn, 100V, 4A, To-252; Transistor Polarity Onsemi
99AC6871
Transistor, Npn, 100V, 4A, To-252; Transistor Polarity Onsemi 99AC6871
TRANSISTOR, NPN, 100V, 4A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:180MHz; Power Dissipation Pd:20W; DC Collector Current:4A; DC Current Gain hFE:200hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, NPN, 100V, 4A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:180MHz; Power Dissipation Pd:20W; DC Collector Current:4A; DC Current Gain hFE:200hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SD1816T-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SD1816T-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SD1816T-TL-E
TRANS NPN 100V 4A TPFA

TRANS NPN 100V 4A TPFA

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Rochester Electronics Win Source Electronics Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 276-2SD1816T-TL-E 2SD1816T-TL-EOSTR-ND 2SD1816T-TL-E 762827-2SD1816T-TL-E 1126342-2SD1816T-TL-E 2SD1816T-TL-E 99AC6871 2SD1816T-TL-E
Product Name 100V 4A DPAK Bipolar Transistor Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SD1816T-TL-E TRANSISTORS - Transistors (BJT) - Single - 2SD1816T-TL-E Bipolar Transistors - BJT Transistor, Npn, 100V, 4A, To-252; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN NPN NPN
IC(max) 4000 milliamps 4000 milliamps
VCBO 120 volts
fT 130 MHz
PD 20000 milliwatts
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