onsemi 2SD1816S-TL-EX

Description
Small Signal Bipolar Transistor, 4A, 100V, NPN, TO-252
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Description
Small Signal Bipolar Transistor, 4A, 100V, NPN, TO-252
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Datasheet
Datasheet Summary
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NPN silicon bipolar transistor designed for high current switching applications such as relay drivers and inverters, housed in a DPAK/TP-FA surface-mount package. It has a collector-to-emitter voltage rating of 100 V, a continuous collector current of 4 A, and a Collector-to-Emitter Saturation Voltage of up to 400 mV at 2 A collector current and 0.2 A base current. The device features a gain-bandwidth product of 180 MHz and a turn-off time of 50 ns. It meets a maximum junction temperature of 150 °C and is certified as Pb-Free and Halogen Free for the TL-H variant.

Datasheet Summary
Powered by GS/AI

NPN silicon bipolar transistor designed for high current switching applications such as relay drivers and inverters, housed in a DPAK/TP-FA surface-mount package. It has a collector-to-emitter voltage rating of 100 V, a continuous collector current of 4 A, and a Collector-to-Emitter Saturation Voltage of up to 400 mV at 2 A collector current and 0.2 A base current. The device features a gain-bandwidth product of 180 MHz and a turn-off time of 50 ns. It meets a maximum junction temperature of 150 °C and is certified as Pb-Free and Halogen Free for the TL-H variant.

Suppliers

Company
Product
Description
Supplier Links
 - 2SD1816S-TL-EX - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 4A, 100V, NPN, TO-252

Small Signal Bipolar Transistor, 4A, 100V, NPN, TO-252

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SD1816S-TL-EX
Polarity NPN
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