onsemi TRANSISTORS - Transistors (BJT) - Single - 2SD1816S-E 2SD1816S-E

Manufacturer: ON Semiconductor
Win Source Part Number: 075555-2SD1816S-E
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 180MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TP
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 400mV @ 200mA, 2A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 70 @ 500mA, 5V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single

Bipolar (BJT) Transistor NPN 100V 4A 180MHz 1W Through Hole TP

Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single, IPAK / TP, 500-BLKBG Product overview: 2SD1816S-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD1816S-E can be used for catalog matching and distributor lookup.