onsemi Single Bipolar Transistors 2SD1801T-E

Description
Bipolar (BJT) Transistor
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Description
Bipolar (BJT) Transistor
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - 2SD1801T-EOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SD1801T-EOS-ND
Single Bipolar Transistors 2SD1801T-EOS-ND
Bipolar (BJT) Transistor

Bipolar (BJT) Transistor

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Single Bipolar Transistors - 488-2SD1801T-E-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-2SD1801T-E-ND
Single Bipolar Transistors 488-2SD1801T-E-ND
TRANS NPN 50V 2A TP-FA

TRANS NPN 50V 2A TP-FA

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 - 2SD1801T-E - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor

Small Signal Bipolar Transistor

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TRANSISTORS - Transistors (BJT) - Single - 2SD1801T-E - 772267-2SD1801T-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD1801T-E
772267-2SD1801T-E
TRANSISTORS - Transistors (BJT) - Single - 2SD1801T-E 772267-2SD1801T-E
Manufacturer: ON Semiconductor Win Source Part Number: 772267-2SD1801T-E Packaging: Bulk Operating Temperature Range: 150°C (TJ) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: SMD Power - Max: 800mW Transistor Type: NPN Frequency - Transition: 150MHz Family Name: 2SD1801T Categories: Discrete Semiconductor Products Manufacturer Package: 2-TP-FA Current - Collector (Ic) (Maximum): 2A Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 100mA, 2V Introduction Date: January 19, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 772267-2SD1801T-E
Packaging: Bulk
Operating Temperature Range: 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Power - Max: 800mW
Transistor Type: NPN
Frequency - Transition: 150MHz
Family Name: 2SD1801T
Categories: Discrete Semiconductor Products
Manufacturer Package: 2-TP-FA
Current - Collector (Ic) (Maximum): 2A
Voltage - Collector Emitter Breakdown (Maximum): 50V
Vce Saturation (Maximum) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 100mA, 2V
Introduction Date: January 19, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SD1801T-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SD1801T-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SD1801T-E
TRANS NPN 50V 2A TP-FA

TRANS NPN 50V 2A TP-FA

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2SD1801T-EOS-ND 2SD1801T-E 772267-2SD1801T-E 2SD1801T-E
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SD1801T-E Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type IPAK-3 SOT3; TO-252 (DPAK)
Packing Method Tape Reel; Tape & Reel Bulk; Bulk Bag,Bag
Polarity NPN
IC(max) 1.00E-4 milliamps
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