onsemi Single Bipolar Transistors 2SD1801S-TL-E

Description
Bipolar (BJT) Transistor NPN 50V 2A 150MHz 800mW Surface Mount TP-FA
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 50V 2A 150MHz 800mW Surface Mount TP-FA
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - 2SD1801S-TL-EOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SD1801S-TL-EOSTR-ND
Single Bipolar Transistors 2SD1801S-TL-EOSTR-ND
Bipolar (BJT) Transistor NPN 50V 2A 150MHz 800mW Surface Mount TP-FA

Bipolar (BJT) Transistor NPN 50V 2A 150MHz 800mW Surface Mount TP-FA

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SD1801S-TL-E - 005955-2SD1801S-TL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD1801S-TL-E
005955-2SD1801S-TL-E
TRANSISTORS - Transistors (BJT) - Single - 2SD1801S-TL-E 005955-2SD1801S-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 005955-2SD1801S-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 400mV @ 50mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 2V Maximum Power Dissipation: 800mW Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 005955-2SD1801S-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 2-TP-FA
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 400mV @ 50mA, 1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 100mA, 2V
Maximum Power Dissipation: 800mW
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SD1801S-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SD1801S-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SD1801S-TL-E
TRANS NPN 50V 2A TPFA

TRANS NPN 50V 2A TPFA

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SD1801S-TL-E
Bipolar Transistors - BJT 2SD1801S-TL-E
Bipolar Transistors - BJT BIP NPN 2A 50V

Bipolar Transistors - BJT BIP NPN 2A 50V

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2SD1801S-TL-EOSTR-ND 005955-2SD1801S-TL-E 2SD1801S-TL-E 2SD1801S-TL-E
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SD1801S-TL-E Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN; NPN
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