onsemi Through-Hole 50V 2A 800mW Bipolar Transistor 2SD1801S-E

NPN BJT Transistor 50V 2A 800mW Through Hole TP Product overview: 2SD1801S-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 50V, 2A, 800mW. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 50V, 2A, 800mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD1801S-E can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN 50V 2A 150MHz 800mW Through Hole TP

Win Source Part Number: 1037372-2SD1801S-E
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 500
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): 2SD1802S-E; 2SD1803T-E; 2SD1802T-E;
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: onsemi
Other Names: ONSONS2SD1801S-E,2SD1801S-EOS,2156-2SD1801S-E,2SD1801S-E-ND
Base Product Number: 2SD1801
Product Status: Obsolete