onsemi 2SD1111

NPN epitaxial planar silicon Darlington transistor designed for driver applications such as motor, relay, and printer hammer drivers. The device is housed in a 3-pin package with dimensions of 6.0 mm length, 4.0 mm width, and 1.3 mm lead spacing. It features a collector-to-emitter voltage rating of 50 V, collector current of 0.7 A, and collector dissipation of 600 mW. The transistor has a minimum DC current gain of 4000 at 500 mA collector current, low collector-to-emitter saturation voltage of 0.8 V typ, and a gain-bandwidth product of 200 MHz. It meets operating junction temperature up to 150°C and storage temperature range from -55°C to +150°C.