onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 2SD1111-AA

Description
Win Source Part Number: 969298-2SD1111-AA Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1 Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 700 mA Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V Frequency - Transition: 200MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: 3-NP Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 72 pct. MSL Level: Vendor Undefined REACH Status: REACH Unaffected Mfr: Sanyo Other Names: 2156-2SD1111-AA-6000 57
Request a Quote Datasheet
Description
Win Source Part Number: 969298-2SD1111-AA Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1 Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 700 mA Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V Frequency - Transition: 200MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: 3-NP Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 72 pct. MSL Level: Vendor Undefined REACH Status: REACH Unaffected Mfr: Sanyo Other Names: 2156-2SD1111-AA-6000 57
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 969298-2SD1111-AA - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
969298-2SD1111-AA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 969298-2SD1111-AA
Win Source Part Number: 969298-2SD1111-AA Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1 Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 700 mA Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V Frequency - Transition: 200MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: 3-NP Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 72 pct. MSL Level: Vendor Undefined REACH Status: REACH Unaffected Mfr: Sanyo Other Names: 2156-2SD1111-AA-6000 57

Win Source Part Number: 969298-2SD1111-AA
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 1
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 700 mA
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V
Frequency - Transition: 200MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: 3-NP
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 72 pct.
MSL Level: Vendor Undefined
REACH Status: REACH Unaffected
Mfr: Sanyo
Other Names: 2156-2SD1111-AA-600057

Buy Now Datasheet
 - 2SD1111-AA - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Planar Silicon Darlington Transistor

NPN Epitaxial Planar Silicon Darlington Transistor

Supplier's Site Datasheet
 - 2SD1111-AA - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Planar Silicon Darlington Transistor

NPN Epitaxial Planar Silicon Darlington Transistor

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SD1111-AA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SD1111-AA
TRANS NPN DARL 50V 0.7A 3NP

TRANS NPN DARL 50V 0.7A 3NP

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors RF Transistors Bipolar RF Transistors
Product Number 969298-2SD1111-AA 2SD1111-AA 2SD1111-AA
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type SOT3 TO-92; TO-92-3
IC(max) 700 milliamps 700 milliamps
Power Gain 5000 dB
Operating Frequency 200 MHz
Unlock Full Specs
to access all available technical data