NPN Epitaxial Planar Silicon Darlington Transistor
NPN Epitaxial Planar Silicon Darlington Transistor
Win Source Part Number: 969298-2SD1111-AA
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 1
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 700 mA
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V
Frequency - Transition: 200MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: 3-NP
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 72 pct.
MSL Level: Vendor Undefined
REACH Status: REACH Unaffected
Mfr: Sanyo
Other Names: 2156-2SD1111-AA-6000
TRANS NPN DARL 50V 0.7A 3NP
| Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 2SD1111-AA | 969298-2SD1111-AA | 2SD1111-AA |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | NPN | NPN | |
| Package Type | TO-92; TO-92-3 | SOT3 | |
| IC(max) | 700 milliamps | 700 milliamps | |
| Power Gain | 5000 dB | ||
| Operating Frequency | 200 MHz |
