onsemi Single Bipolar Transistors 2SC5707-E

Description
Bipolar (BJT) Transistor NPN 50V 8A 330MHz 1W Through Hole TP
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 50V 8A 330MHz 1W Through Hole TP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2SC5707-EOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC5707-EOS-ND
Single Bipolar Transistors 2SC5707-EOS-ND
Bipolar (BJT) Transistor NPN 50V 8A 330MHz 1W Through Hole TP

Bipolar (BJT) Transistor NPN 50V 8A 330MHz 1W Through Hole TP

Buy Now Datasheet
Singapore
50V 8A 330MHz Bipolar Transistor
276-2SC5707-E
50V 8A 330MHz Bipolar Transistor 276-2SC5707-E
NPN BJT, 50V, 8A, 330MHz, TO-251 Product overview: 2SC5707-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 8A, 330MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 8A, 330MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC5707-E can be used for catalog matching and distributor lookup.

NPN BJT, 50V, 8A, 330MHz, TO-251 Product overview: 2SC5707-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 8A, 330MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 8A, 330MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC5707-E can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors (BJT) - Single - 2SC5707-E - 005915-2SC5707-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC5707-E
005915-2SC5707-E
TRANSISTORS - Transistors (BJT) - Single - 2SC5707-E 005915-2SC5707-E
Manufacturer: ON Semiconductor Win Source Part Number: 005915-2SC5707-E Packaging: Bulk Mounting: Through Hole Frequency - Transition: 330MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TP Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 240mV @ 175mA, 3.5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 500mA, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 005915-2SC5707-E
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 330MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TP
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 240mV @ 175mA, 3.5A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 500mA, 2V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SC5707-E
Bipolar Transistors - BJT 2SC5707-E
Bipolar Transistors - BJT BIP NPN 8A 50V

Bipolar Transistors - BJT BIP NPN 8A 50V

Buy Now Datasheet
Trans, Npn, 50V, 8A, 150Deg C, 15W; Transistor Polarity Onsemi - 65T2498 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Npn, 50V, 8A, 150Deg C, 15W; Transistor Polarity Onsemi
65T2498
Trans, Npn, 50V, 8A, 150Deg C, 15W; Transistor Polarity Onsemi 65T2498
TRANS, NPN, 50V, 8A, 150DEG C, 15W; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:8A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:330MHz RoHS Compliant: Yes

TRANS, NPN, 50V, 8A, 150DEG C, 15W; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:8A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:330MHz RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC5707-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC5707-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC5707-E
TRANS NPN 50V 8A TP

TRANS NPN 50V 8A TP

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 2SC5707-EOS-ND 276-2SC5707-E 005915-2SC5707-E 2SC5707-E 65T2498 2SC5707-E
Product Name Single Bipolar Transistors 50V 8A 330MHz Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2SC5707-E Bipolar Transistors - BJT Trans, Npn, 50V, 8A, 150Deg C, 15W; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN NPN
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; TP TO-3
IC(max) 8000 milliamps 8000 milliamps
VCEO 50 volts 50 volts
VCBO 100 volts
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