onsemi TRANSISTORS - Transistors (BJT) - Single - 2SC5707-E 2SC5707-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 005915-2SC5707-E Packaging: Bulk Mounting: Through Hole Frequency - Transition: 330MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TP Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 240mV @ 175mA, 3.5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 500mA, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 005915-2SC5707-E Packaging: Bulk Mounting: Through Hole Frequency - Transition: 330MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TP Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 240mV @ 175mA, 3.5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 500mA, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2SC5707-E - 005915-2SC5707-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC5707-E
005915-2SC5707-E
TRANSISTORS - Transistors (BJT) - Single - 2SC5707-E 005915-2SC5707-E
Manufacturer: ON Semiconductor Win Source Part Number: 005915-2SC5707-E Packaging: Bulk Mounting: Through Hole Frequency - Transition: 330MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TP Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 240mV @ 175mA, 3.5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 500mA, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 005915-2SC5707-E
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 330MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TP
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 240mV @ 175mA, 3.5A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 500mA, 2V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single Bipolar Transistors - 2SC5707-EOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC5707-EOS-ND
Single Bipolar Transistors 2SC5707-EOS-ND
Bipolar (BJT) Transistor NPN 50V 8A 330MHz 1W Through Hole TP

Bipolar (BJT) Transistor NPN 50V 8A 330MHz 1W Through Hole TP

Buy Now Datasheet
Trans, Npn, 50V, 8A, 150Deg C, 15W; Transistor Polarity Onsemi - 65T2498 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Npn, 50V, 8A, 150Deg C, 15W; Transistor Polarity Onsemi
65T2498
Trans, Npn, 50V, 8A, 150Deg C, 15W; Transistor Polarity Onsemi 65T2498
TRANS, NPN, 50V, 8A, 150DEG C, 15W; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:8A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:330MHz RoHS Compliant: Yes

TRANS, NPN, 50V, 8A, 150DEG C, 15W; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:8A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:330MHz RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC5707-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC5707-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC5707-E
TRANS NPN 50V 8A TP

TRANS NPN 50V 8A TP

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SC5707-E
Bipolar Transistors - BJT 2SC5707-E
Bipolar Transistors - BJT BIP NPN 8A 50V

Bipolar Transistors - BJT BIP NPN 8A 50V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 005915-2SC5707-E 2SC5707-EOS-ND 65T2498 2SC5707-E 2SC5707-E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SC5707-E Single Bipolar Transistors Trans, Npn, 50V, 8A, 150Deg C, 15W; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN; NPN NPN NPN
Package Type SOT3; TP TO-251-3 Short Leads, IPAK, TO-251AA TO-3
Transistor Type Trans, Npn, 50V, 8A, 150Deg C, 15W; Transistor Polarity Onsemi
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