Bipolar (BJT) Transistor NPN 50V 8A 330MHz 1W Through Hole TP
Manufacturer: ON Semiconductor
Win Source Part Number: 005915-2SC5707-E
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 330MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TP
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 240mV @ 175mA, 3.5A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 500mA, 2V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
TRANS NPN 50V 8A TP
Bipolar Transistors - BJT BIP NPN 8A 50V
TRANS, NPN, 50V, 8A, 150DEG C, 15W; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:8A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:330MHz RoHS Compliant: Yes
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | 2SC5707-EOS-ND | 005915-2SC5707-E | 2SC5707-E | 2SC5707-E | 65T2498 |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - 2SC5707-E | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT | Trans, Npn, 50V, 8A, 150Deg C, 15W; Transistor Polarity Onsemi |
| Polarity | NPN | NPN; NPN | NPN | ||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; TP | TO-3 | ||
| Packing Method | Bag |
