onsemi TRANSISTORS - Transistors (BJT) - Single - 2SC5706-E 2SC5706-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 709131-2SC5706-E Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 400MHz Categories: Discrete Semiconductor Products Supplier Device Package: TP Temperature Range - Operating: 150°C Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Current - Collector (Ic) (Maximum): 5A Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 1μA (ICBO) Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Family Part Number: 2SC5706 Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 240mV at 100mA, 2A DC Current Gain (hFE) (Minimum) at Ic, Vce: 200 at 500mA, 2V Maximum Power: 800mW
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 709131-2SC5706-E Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 400MHz Categories: Discrete Semiconductor Products Supplier Device Package: TP Temperature Range - Operating: 150°C Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Current - Collector (Ic) (Maximum): 5A Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 1μA (ICBO) Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Family Part Number: 2SC5706 Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 240mV at 100mA, 2A DC Current Gain (hFE) (Minimum) at Ic, Vce: 200 at 500mA, 2V Maximum Power: 800mW
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2SC5706-E - 709131-2SC5706-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC5706-E
709131-2SC5706-E
TRANSISTORS - Transistors (BJT) - Single - 2SC5706-E 709131-2SC5706-E
Manufacturer: ON Semiconductor Win Source Part Number: 709131-2SC5706-E Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 400MHz Categories: Discrete Semiconductor Products Supplier Device Package: TP Temperature Range - Operating: 150°C Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Current - Collector (Ic) (Maximum): 5A Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 1μA (ICBO) Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Family Part Number: 2SC5706 Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 240mV at 100mA, 2A DC Current Gain (hFE) (Minimum) at Ic, Vce: 200 at 500mA, 2V Maximum Power: 800mW

Manufacturer: ON Semiconductor
Win Source Part Number: 709131-2SC5706-E
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 400MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TP
Temperature Range - Operating: 150°C
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Maximum): 5A
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 1μA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Family Part Number: 2SC5706
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 240mV at 100mA, 2A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 200 at 500mA, 2V
Maximum Power: 800mW

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Single Bipolar Transistors - 2SC5706-E - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
2SC5706-E
Single Bipolar Transistors 2SC5706-E
TRANS NPN 50V 5A TP

TRANS NPN 50V 5A TP

Supplier's Site Datasheet
Single Bipolar Transistors - 2SC5706-EOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC5706-EOS-ND
Single Bipolar Transistors 2SC5706-EOS-ND
Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Through Hole TP

Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Through Hole TP

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Bipolar Transistors - BJT BIP NPN 5A 50V - 598-2SC5706-E - Utmel Electronic Limited
Hong Kong, China
Bipolar Transistors - BJT BIP NPN 5A 50V
598-2SC5706-E
Bipolar Transistors - BJT BIP NPN 5A 50V 598-2SC5706-E
Bipolar Transistors - BJT BIP NPN 5A 50V

Bipolar Transistors - BJT BIP NPN 5A 50V

Supplier's Site
Bipolar Transistor, Npn, 50V, To-251-4; Transistor Polarity Onsemi - 65T2494 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 50V, To-251-4; Transistor Polarity Onsemi
65T2494
Bipolar Transistor, Npn, 50V, To-251-4; Transistor Polarity Onsemi 65T2494
BIPOLAR TRANSISTOR, NPN, 50V, TO-251-4; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:5A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 50V, TO-251-4; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:5A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Bipolar Transistor, Npn, 50V, To-251-4; Transistor Polarity Onsemi - 50AC7736 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 50V, To-251-4; Transistor Polarity Onsemi
50AC7736
Bipolar Transistor, Npn, 50V, To-251-4; Transistor Polarity Onsemi 50AC7736
BIPOLAR TRANSISTOR, NPN, 50V, TO-251-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:400MHz; Power Dissipation Pd:15W; DC Collector Current:5A; DC Current Gain hFE:200hFE; Transistor Case RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 50V, TO-251-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:400MHz; Power Dissipation Pd:15W; DC Collector Current:5A; DC Current Gain hFE:200hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC5706-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC5706-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC5706-E
TRANS NPN 50V 5A TP

TRANS NPN 50V 5A TP

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SC5706-E
Bipolar Transistors - BJT 2SC5706-E
Bipolar Transistors - BJT BIP NPN 5A 50V

Bipolar Transistors - BJT BIP NPN 5A 50V

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Utmel Electronic Limited Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 709131-2SC5706-E 2SC5706-E 2SC5706-EOS-ND 598-2SC5706-E 65T2494 50AC7736 2SC5706-E 2SC5706-E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SC5706-E Single Bipolar Transistors Single Bipolar Transistors Bipolar Transistors - BJT BIP NPN 5A 50V Bipolar Transistor, Npn, 50V, To-251-4; Transistor Polarity Onsemi Bipolar Transistor, Npn, 50V, To-251-4; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN; NPN NPN NPN; NPN NPN NPN
Package Type SOT3 TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPAK, TO-251AA TO-3 TO-3
Packing Method Bulk; Bulk Bulk; Bulk Bulk; Bulk
IC(max) 1.00E-3 milliamps 5000 milliamps 5000 milliamps 5000 milliamps 5000 milliamps 5000 milliamps
Power Gain 200 dB
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