Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Through Hole TP
Bipolar Transistor, 50V, 5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 500-BLKBG Product overview: 2SC5706-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 5A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 5A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC5706-E can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 709131-2SC5706-E
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 400MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TP
Temperature Range - Operating: 150°C
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Maximum): 5A
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 1μA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Family Part Number: 2SC5706
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 240mV at 100mA, 2A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 200 at 500mA, 2V
Maximum Power: 800mW
TRANS NPN 50V 5A TP
Bipolar Transistors - BJT BIP NPN 5A 50V
BIPOLAR TRANSISTOR, NPN, 50V, TO-251-4; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:5A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes
BIPOLAR TRANSISTOR, NPN, 50V, TO-251-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:400MHz; Power Dissipation Pd:15W; DC Collector Current:5A; DC Current Gain hFE:200hFE; Transistor Case RoHS Compliant: Yes
Bipolar Transistors - BJT BIP NPN 5A 50V
TRANS NPN 50V 5A TP
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 2SC5706-EOS-ND | 276-2SC5706-E | 709131-2SC5706-E | 2SC5706-E | 598-2SC5706-E | 65T2494 | 50AC7736 | 2SC5706-E | 2SC5706-E |
| Product Name | Single Bipolar Transistors | 50V 5A DPAK Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - 2SC5706-E | Single Bipolar Transistors | Bipolar Transistors - BJT BIP NPN 5A 50V | Bipolar Transistor, Npn, 50V, To-251-4; Transistor Polarity Onsemi | Bipolar Transistor, Npn, 50V, To-251-4; Transistor Polarity Onsemi | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN | NPN | NPN; NPN | NPN; NPN | NPN | NPN | ||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3 | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 | TO-3 | ||||
| IC(max) | 5000 milliamps | 1.00E-3 milliamps | 5000 milliamps | 5000 milliamps | 5000 milliamps | 5000 milliamps | 5000 milliamps | ||
| VCEO | 50 volts | 50 volts | 50 volts | 50 volts | 50 volts | ||||
| VCBO | 100 volts |
