onsemi 30 V 300 mA 3.5 GHz SOT-89 Bipolar Transistor 2SC5551AF-TD-E

Description
RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz, SOT-89 / PCP-1, 1000-REEL Product overview: 2SC5551AF-TD-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 300 mA, 3.5 GHz, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 300 mA, 3.5 GHz, SOT-89, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5551AF-TD-E can be used for catalog matching and distributor lookup.
  • TRANSISTORS - RF Transistors (BJT) - 2SC5551AF-TD-E - 125927-2SC5551AF-TD-E - Win Source Electronics
    Win Source Electronics
  • Bipolar RF Transistors - 2SC5551AF-TD-EOSTR-ND - DigiKey
    DigiKey
  • Bipolar RF Transistors - 2SC5551AF-TD-E - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Reel / Bip Npn 300Ma 30V Ft=3. Onsemi - 52T9084 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC5551AF-TD-E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz, SOT-89 / PCP-1, 1000-REEL Product overview: 2SC5551AF-TD-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 300 mA, 3.5 GHz, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 300 mA, 3.5 GHz, SOT-89, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5551AF-TD-E can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
30 V 300 mA 3.5 GHz SOT-89 Bipolar Transistor
283-2SC5551AF-TD-E
30 V 300 mA 3.5 GHz SOT-89 Bipolar Transistor 283-2SC5551AF-TD-E
RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz, SOT-89 / PCP-1, 1000-REEL Product overview: 2SC5551AF-TD-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 300 mA, 3.5 GHz, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 300 mA, 3.5 GHz, SOT-89, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5551AF-TD-E can be used for catalog matching and distributor lookup.

RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz, SOT-89 / PCP-1, 1000-REEL Product overview: 2SC5551AF-TD-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 300 mA, 3.5 GHz, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 300 mA, 3.5 GHz, SOT-89, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5551AF-TD-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - 2SC5551AF-TD-E - 125927-2SC5551AF-TD-E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SC5551AF-TD-E
125927-2SC5551AF-TD-E
TRANSISTORS - RF Transistors (BJT) - 2SC5551AF-TD-E 125927-2SC5551AF-TD-E
Manufacturer: ON Semiconductor Win Source Part Number: 125927-2SC5551AF-TD- E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 3.5GHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PCP Maximum Current Collector: 300mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Typical Gain (hFE) (Min): 135 @ 50mA, 5V Maximum Power Dissipation: 1.3W Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 125927-2SC5551AF-TD-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 3.5GHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PCP
Maximum Current Collector: 300mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Typical Gain (hFE) (Min): 135 @ 50mA, 5V
Maximum Power Dissipation: 1.3W
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - 2SC5551AF-TD-EOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
2SC5551AF-TD-EOSTR-ND
Bipolar RF Transistors 2SC5551AF-TD-EOSTR-ND
RF Transistor NPN 30V 300mA 3.5GHz 1.3W Surface Mount PCP

RF Transistor NPN 30V 300mA 3.5GHz 1.3W Surface Mount PCP

Buy Now Datasheet
Bipolar RF Transistors - 2SC5551AF-TD-E - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
2SC5551AF-TD-E
Bipolar RF Transistors 2SC5551AF-TD-E
RF TRANS NPN 30V 3.5GHZ PCP

RF TRANS NPN 30V 3.5GHZ PCP

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
RF Bipolar Transistors
2SC5551AF-TD-E
RF Bipolar Transistors 2SC5551AF-TD-E
RF Bipolar Transistors RF Transistors 30V,300mA,fT=3.5GHz

RF Bipolar Transistors RF Transistors 30V,300mA,fT=3.5GHz

Buy Now Datasheet
Reel / Bip Npn 300Ma 30V Ft=3. Onsemi - 52T9084 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Reel / Bip Npn 300Ma 30V Ft=3. Onsemi
52T9084
Reel / Bip Npn 300Ma 30V Ft=3. Onsemi 52T9084
REEL / BIP NPN 300MA 30V FT=3.

REEL / BIP NPN 300MA 30V FT=3.

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC5551AF-TD-E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC5551AF-TD-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC5551AF-TD-E
RF TRANS NPN 30V 3.5GHZ PCP

RF TRANS NPN 30V 3.5GHZ PCP

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 283-2SC5551AF-TD-E 125927-2SC5551AF-TD-E 2SC5551AF-TD-EOSTR-ND 2SC5551AF-TD-E 2SC5551AF-TD-E 52T9084 2SC5551AF-TD-E
Product Name 30 V 300 mA 3.5 GHz SOT-89 Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - 2SC5551AF-TD-E Bipolar RF Transistors Bipolar RF Transistors RF Bipolar Transistors Reel / Bip Npn 300Ma 30V Ft=3. Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN NPN; NPN NPN
Package Type SOT3; PCP TO-243AA TO-243AA TO-3
IC(max) 300 milliamps
VCEO 30 volts 30 volts
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