onsemi 30 V 300 mA 3.5 GHz SOT-89 Bipolar Transistor 2SC5551AE-TD-E

Description
RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz, SOT-89 / PCP-1, 1000-REEL Product overview: 2SC5551AE-TD-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 300 mA, 3.5 GHz, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 300 mA, 3.5 GHz, SOT-89, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5551AE-TD-E can be used for catalog matching and distributor lookup.
  • Bipolar RF Transistors - 2SC5551AE-TD-E - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Bipolar RF Transistors - 2SC5551AE-TD-EOSTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - RF Transistors (BJT) - 2SC5551AE-TD-E - 075524-2SC5551AE-TD-E - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC5551AE-TD-E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • TRANS NPN BIPO HI FREQ PCP - 598-2SC5551AE-TD-E - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz, SOT-89 / PCP-1, 1000-REEL Product overview: 2SC5551AE-TD-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 300 mA, 3.5 GHz, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 300 mA, 3.5 GHz, SOT-89, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5551AE-TD-E can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
30 V 300 mA 3.5 GHz SOT-89 Bipolar Transistor
283-2SC5551AE-TD-E
30 V 300 mA 3.5 GHz SOT-89 Bipolar Transistor 283-2SC5551AE-TD-E
RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz, SOT-89 / PCP-1, 1000-REEL Product overview: 2SC5551AE-TD-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 300 mA, 3.5 GHz, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 300 mA, 3.5 GHz, SOT-89, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5551AE-TD-E can be used for catalog matching and distributor lookup.

RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz, SOT-89 / PCP-1, 1000-REEL Product overview: 2SC5551AE-TD-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 300 mA, 3.5 GHz, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 300 mA, 3.5 GHz, SOT-89, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5551AE-TD-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar RF Transistors - 2SC5551AE-TD-E - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
2SC5551AE-TD-E
Bipolar RF Transistors 2SC5551AE-TD-E
RF TRANS NPN 30V 3.5GHZ PCP

RF TRANS NPN 30V 3.5GHZ PCP

Supplier's Site Datasheet
Bipolar RF Transistors - 2SC5551AE-TD-EOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
2SC5551AE-TD-EOSTR-ND
Bipolar RF Transistors 2SC5551AE-TD-EOSTR-ND
RF Transistor NPN 30V 300mA 3.5GHz 1.3W Surface Mount PCP

RF Transistor NPN 30V 300mA 3.5GHz 1.3W Surface Mount PCP

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - 2SC5551AE-TD-E - 075524-2SC5551AE-TD-E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SC5551AE-TD-E
075524-2SC5551AE-TD-E
TRANSISTORS - RF Transistors (BJT) - 2SC5551AE-TD-E 075524-2SC5551AE-TD-E
Manufacturer: ON Semiconductor Win Source Part Number: 075524-2SC5551AE-TD- E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 3.5GHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PCP Maximum Current Collector: 300mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Typical Gain (hFE) (Min): 90 @ 50mA, 5V Maximum Power Dissipation: 1.3W Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 075524-2SC5551AE-TD-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 3.5GHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PCP
Maximum Current Collector: 300mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Typical Gain (hFE) (Min): 90 @ 50mA, 5V
Maximum Power Dissipation: 1.3W
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SC5551AE-TD-E
Bipolar Transistors - BJT 2SC5551AE-TD-E
Bipolar Transistors - BJT RF Transistors 30V,300mA,fT=3.5GHz

Bipolar Transistors - BJT RF Transistors 30V,300mA,fT=3.5GHz

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC5551AE-TD-E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC5551AE-TD-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC5551AE-TD-E
RF TRANS NPN 30V 3.5GHZ PCP

RF TRANS NPN 30V 3.5GHZ PCP

Supplier's Site
TRANS NPN BIPO HI FREQ PCP - 598-2SC5551AE-TD-E - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
TRANS NPN BIPO HI FREQ PCP
598-2SC5551AE-TD-E
TRANS NPN BIPO HI FREQ PCP 598-2SC5551AE-TD-E
TRANS NPN BIPO HI FREQ PCP

TRANS NPN BIPO HI FREQ PCP

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 283-2SC5551AE-TD-E 2SC5551AE-TD-E 2SC5551AE-TD-EOSTR-ND 075524-2SC5551AE-TD-E 2SC5551AE-TD-E 2SC5551AE-TD-E 598-2SC5551AE-TD-E
Product Name 30 V 300 mA 3.5 GHz SOT-89 Bipolar Transistor Bipolar RF Transistors Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - 2SC5551AE-TD-E Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANS NPN BIPO HI FREQ PCP
Polarity NPN; NPN NPN NPN; NPN NPN; NPN
Package Type TO-243AA TO-243AA SOT3; PCP
IC(max) 300 milliamps
VCEO 30 volts 30 volts
Operating Frequency 3500 MHz
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