onsemi Bipolar RF Transistors 2SC5415AE-TD-E

Description
RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz
Request a Quote Datasheet
Description
RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 2SC5415AE-TD-E - Rochester Electronics
Newburyport, MA, United States
RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz

RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz

Supplier's Site Datasheet
Bipolar RF Transistors - 2SC5415AE-TD-EOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
2SC5415AE-TD-EOSTR-ND
Bipolar RF Transistors 2SC5415AE-TD-EOSTR-ND
RF Transistor NPN 12V 100mA 6.7GHz 800mW Surface Mount PCP

RF Transistor NPN 12V 100mA 6.7GHz 800mW Surface Mount PCP

Buy Now Datasheet
Bipolar RF Transistors - 2SC5415AE-TD-E - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
2SC5415AE-TD-E
Bipolar RF Transistors 2SC5415AE-TD-E
RF TRANS NPN 12V 6.7GHZ PCP

RF TRANS NPN 12V 6.7GHZ PCP

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - 2SC5415AE-TD-E - 1004458-2SC5415AE-TD-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SC5415AE-TD-E
1004458-2SC5415AE-TD-E
TRANSISTORS - RF Transistors (BJT) - 2SC5415AE-TD-E 1004458-2SC5415AE-TD-E
Manufacturer: ON Semiconductor Win Source Part Number: 1004458-2SC5415AE-TD -E Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9dB Frequency - Transition: 6.7GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PCP Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 90 @ 30mA, 5V Maximum Power Dissipation: 800mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1004458-2SC5415AE-TD-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9dB
Frequency - Transition: 6.7GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PCP
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 90 @ 30mA, 5V
Maximum Power Dissipation: 800mW
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SC5415AE-TD-E
Bipolar Transistors - BJT 2SC5415AE-TD-E
Bipolar Transistors - BJT ULAHIGH-FREQUENCY TRANSISTOR

Bipolar Transistors - BJT ULAHIGH-FREQUENCY TRANSISTOR

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC5415AE-TD-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC5415AE-TD-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC5415AE-TD-E
RF TRANS NPN 12V 6.7GHZ PCP

RF TRANS NPN 12V 6.7GHZ PCP

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2SC5415AE-TD-E 2SC5415AE-TD-EOSTR-ND 2SC5415AE-TD-E 1004458-2SC5415AE-TD-E 2SC5415AE-TD-E 2SC5415AE-TD-E
Product Name Bipolar RF Transistors Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - 2SC5415AE-TD-E Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN NPN; NPN
Package Type SOT89; SOT-89 / PCP-1 TO-243AA TO-243AA SOT3; PCP
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT)
IC(max) 100 milliamps
VCEO 12 volts 12 volts
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