onsemi Bipolar RF Transistors 2SC5415AE-TD-E

RF Transistor NPN 12V 100mA 6.7GHz 800mW Surface Mount PCP

RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz

RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz, SOT-89 / PCP-1, 1000-REEL Product overview: 2SC5415AE-TD-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12 V, 100 mA, 6.7 GHz, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 12 V, 100 mA, 6.7 GHz, SOT-89, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5415AE-TD-E can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1004458-2SC5415AE-TD-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9dB
Frequency - Transition: 6.7GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PCP
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 90 @ 30mA, 5V
Maximum Power Dissipation: 800mW
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance