onsemi 2SC536G-SPA-AC

Description
Small Signal NPN Silicon Transistor/Amp
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Description
Small Signal NPN Silicon Transistor/Amp
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Datasheet
Datasheet Summary
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The 2SC536G-SPA-AC is an NPN silicon bipolar transistor from the 2SA608N/2SC536N series, designed for low to high frequency applications requiring low VCE(sat). It is housed in an SC-43A (TO-92) package measuring 5.4 mm × 7.31 mm with a mass of 0.19 g. The transistor operates with a maximum collector-to-emitter voltage of 50 V, collector current of 150 mA, and power dissipation of 500 mW. It features a DC current gain (hFE) range of 280 to 560 at IC = 1 mA and VCE = -6 V, a gain-bandwidth product of 200 MHz, and a collector-to-emitter saturation voltage of 0.3 V at IC = -100 mA and IB = -10 mA. The device meets RoHS compliance and operates within a junction temperature range of -55°C to 150°C.

Datasheet Summary
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The 2SC536G-SPA-AC is an NPN silicon bipolar transistor from the 2SA608N/2SC536N series, designed for low to high frequency applications requiring low VCE(sat). It is housed in an SC-43A (TO-92) package measuring 5.4 mm × 7.31 mm with a mass of 0.19 g. The transistor operates with a maximum collector-to-emitter voltage of 50 V, collector current of 150 mA, and power dissipation of 500 mW. It features a DC current gain (hFE) range of 280 to 560 at IC = 1 mA and VCE = -6 V, a gain-bandwidth product of 200 MHz, and a collector-to-emitter saturation voltage of 0.3 V at IC = -100 mA and IB = -10 mA. The device meets RoHS compliance and operates within a junction temperature range of -55°C to 150°C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SC536G-SPA-AC - Rochester Electronics
Newburyport, MA, United States
Small Signal NPN Silicon Transistor/Amp

Small Signal NPN Silicon Transistor/Amp

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF MOSFET Transistors
Product Number 2SC536G-SPA-AC
Packing Method Ammo Pack
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