The 2SC536N is an NPN silicon bipolar transistor designed for low to high frequency applications, featuring a collector-emitter voltage rating of -50 V, a continuous collector current of 150 mA, and a collector dissipation of 500 mW. It is packaged in SC-43A, TO-92, TO-226AA, or SOT-54 formats, with a mass of 0.19 g. The device has a typical DC current gain (hFE) of 160 to 560 at IC = 1 mA, a gain-bandwidth product of 200 MHz, and a collector-emitter saturation voltage of 0.3 V at IC = 100 mA. It meets RoHS standards and is rated for a junction temperature up to 150°C.
Small Signal NPN Silicon Transistor/Amp
| Rochester Electronics | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | 2SC536F-SPA |
