Small-signal NPN silicon transistor in SC-43A (TO-92) package, rated for a collector-emitter voltage of 50 V, collector current of 150 mA, and power dissipation of 500 mW, with a junction temperature range of -55°C to +150°C. Features a minimum DC current gain (hFE) of 160 at IC = 1 mA and VCE = -6 V, a gain-bandwidth product of 200 MHz, and a collector-emitter saturation voltage of 0.3 V at IC = 100 mA and IB = 10 mA. The device is intended for low- to high-frequency applications and is Pb-free.
Small Signal NPN Silicon Transistor/Amp
| Rochester Electronics | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | 2SC536E-SPA |
